Synthesis and structural properties of CuInGeS4
Identifieur interne : 002410 ( Main/Repository ); précédent : 002409; suivant : 002411Synthesis and structural properties of CuInGeS4
Auteurs : RBID : Pascal:11-0311113Descripteurs français
- Pascal (Inist)
- Traitement thermique, Recuit, Trempe, Diagramme phase, Cellule solaire, Diffraction RX, Analyse thermique, Microstructure, Eutectique, Structure cristalline, Réseau quadratique, Groupe symétrie, Groupe espace, Paramètre cristallin, Sulfure de cuivre, Sulfure d'indium, Sulfure de germanium, Cadmium Gallium Sulfure Mixte, Semiconducteur, Anisotropie, Alliage quaternaire, CuInS2, GeS2, Thiogallate de cadmium, 8130B, 8460J, 6166.
English descriptors
- KwdEn :
- Anisotropy, Annealing, Cadmium Gallium Sulfides Mixed, Copper sulfide, Crystal structure, Eutectics, Germanium sulfides, Heat treatments, Indium sulfide, Lattice parameters, Microstructure, Phase diagrams, Quaternary alloys, Quenching, Semiconductor materials, Solar cells, Space groups, Symmetry groups, Tetragonal lattices, Thermal analysis, XRD.
Abstract
The synthesis of the CuInGeS4 compound was performed in a shaft-type furnace by the single-temperature method realized by the gradual heating of the samples (heating rate of 10 K/h) to 1370 K with an intermediate exposure to 820 K for 36 h. The annealing was performed at 670 K for 250 h. The synthesis process was finished after quenching the samples into cold water. The phase diagram of the CuInS2-GeS2 system was investigated using XRD, differential thermal and microstructure analyses. Two different processes take place in the system, a peritectic one, with the peritectic point coordinates 75 mol% GeS2, 1108 K, and a eutectic one at 86 mol% GeS2, 1033 K. The crystal structure of CuInGeS4 was studied by the powder method. The compound crystallizes in the tetragonal symmetry, space group I-4 (structural type CdGa2S4), with the lattice parameters a=0.55492(2)nm, c= 1.00282(6) nm. Atomic parameters were calculated in the anisotropic approximation, with RI=0.0680 and RP=0.1315.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Synthesis and structural properties of CuInGeS<sub>4</sub></title><author><name sortKey="Gorgut, G P" uniqKey="Gorgut G">G. P. Gorgut</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Inorganic and Physical Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author><author><name sortKey="Fedorchuk, A O" uniqKey="Fedorchuk A">A. O. Fedorchuk</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska St.</s1><s2>79010 Lviv</s2><s3>UKR</s3><sZ>2 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>79010 Lviv</wicri:noRegion></affiliation></author><author><name sortKey="Kityk, I V" uniqKey="Kityk I">I. V. Kityk</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Electrical Engineering Department, Czestochowa University of Technology, Al. Armii Krajowej 17/19</s1><s2>42-200 Czestochowa</s2><s3>POL</s3><sZ>3 aut.</sZ></inist:fA14><country>Pologne</country><wicri:noRegion>42-200 Czestochowa</wicri:noRegion></affiliation></author><author><name sortKey="Sachanyuk, V P" uniqKey="Sachanyuk V">V. P. Sachanyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Inorganic and Physical Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author><author><name sortKey="Olekseyuk, I D" uniqKey="Olekseyuk I">I. D. Olekseyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Inorganic and Physical Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author><author><name sortKey="Parasyuk, O V" uniqKey="Parasyuk O">O. V. Parasyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Inorganic and Physical Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0311113</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0311113 INIST</idno><idno type="RBID">Pascal:11-0311113</idno><idno type="wicri:Area/Main/Corpus">002E80</idno><idno type="wicri:Area/Main/Repository">002410</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term><term>Annealing</term><term>Cadmium Gallium Sulfides Mixed</term><term>Copper sulfide</term><term>Crystal structure</term><term>Eutectics</term><term>Germanium sulfides</term><term>Heat treatments</term><term>Indium sulfide</term><term>Lattice parameters</term><term>Microstructure</term><term>Phase diagrams</term><term>Quaternary alloys</term><term>Quenching</term><term>Semiconductor materials</term><term>Solar cells</term><term>Space groups</term><term>Symmetry groups</term><term>Tetragonal lattices</term><term>Thermal analysis</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement thermique</term><term>Recuit</term><term>Trempe</term><term>Diagramme phase</term><term>Cellule solaire</term><term>Diffraction RX</term><term>Analyse thermique</term><term>Microstructure</term><term>Eutectique</term><term>Structure cristalline</term><term>Réseau quadratique</term><term>Groupe symétrie</term><term>Groupe espace</term><term>Paramètre cristallin</term><term>Sulfure de cuivre</term><term>Sulfure d'indium</term><term>Sulfure de germanium</term><term>Cadmium Gallium Sulfure Mixte</term><term>Semiconducteur</term><term>Anisotropie</term><term>Alliage quaternaire</term><term>CuInS2</term><term>GeS2</term><term>Thiogallate de cadmium</term><term>8130B</term><term>8460J</term><term>6166</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The synthesis of the CuInGeS<sub>4</sub> compound was performed in a shaft-type furnace by the single-temperature method realized by the gradual heating of the samples (heating rate of 10 K/h) to 1370 K with an intermediate exposure to 820 K for 36 h. The annealing was performed at 670 K for 250 h. The synthesis process was finished after quenching the samples into cold water. The phase diagram of the CuInS<sub>2</sub>-GeS<sub>2</sub> system was investigated using XRD, differential thermal and microstructure analyses. Two different processes take place in the system, a peritectic one, with the peritectic point coordinates 75 mol% GeS<sub>2</sub>, 1108 K, and a eutectic one at 86 mol% GeS<sub>2</sub>, 1033 K. The crystal structure of CuInGeS<sub>4</sub> was studied by the powder method. The compound crystallizes in the tetragonal symmetry, space group I-4 (structural type CdGa<sub>2</sub>S<sub>4</sub>), with the lattice parameters a=0.55492(2)nm, c= 1.00282(6) nm. Atomic parameters were calculated in the anisotropic approximation, with R<sub>I</sub>=0.0680 and R<sub>P</sub>=0.1315.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>324</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Synthesis and structural properties of CuInGeS<sub>4</sub></s1></fA08><fA11 i1="01" i2="1"><s1>GORGUT (G. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>FEDORCHUK (A. O.)</s1></fA11><fA11 i1="03" i2="1"><s1>KITYK (I. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>SACHANYUK (V. P.)</s1></fA11><fA11 i1="05" i2="1"><s1>OLEKSEYUK (I. D.)</s1></fA11><fA11 i1="06" i2="1"><s1>PARASYUK (O. V.)</s1></fA11><fA14 i1="01"><s1>Department of Inorganic and Physical Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, 50 Pekarska St.</s1><s2>79010 Lviv</s2><s3>UKR</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Electrical Engineering Department, Czestochowa University of Technology, Al. Armii Krajowej 17/19</s1><s2>42-200 Czestochowa</s2><s3>POL</s3><sZ>3 aut.</sZ></fA14><fA20><s1>212-216</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000190378950370</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0311113</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The synthesis of the CuInGeS<sub>4</sub> compound was performed in a shaft-type furnace by the single-temperature method realized by the gradual heating of the samples (heating rate of 10 K/h) to 1370 K with an intermediate exposure to 820 K for 36 h. The annealing was performed at 670 K for 250 h. The synthesis process was finished after quenching the samples into cold water. The phase diagram of the CuInS<sub>2</sub>-GeS<sub>2</sub> system was investigated using XRD, differential thermal and microstructure analyses. Two different processes take place in the system, a peritectic one, with the peritectic point coordinates 75 mol% GeS<sub>2</sub>, 1108 K, and a eutectic one at 86 mol% GeS<sub>2</sub>, 1033 K. The crystal structure of CuInGeS<sub>4</sub> was studied by the powder method. The compound crystallizes in the tetragonal symmetry, space group I-4 (structural type CdGa<sub>2</sub>S<sub>4</sub>), with the lattice parameters a=0.55492(2)nm, c= 1.00282(6) nm. Atomic parameters were calculated in the anisotropic approximation, with R<sub>I</sub>=0.0680 and R<sub>P</sub>=0.1315.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A30B</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A66</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Heat treatments</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Recuit</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Annealing</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Trempe</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Quenching</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Diagramme phase</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Phase diagrams</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Solar cells</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>XRD</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Analyse thermique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Thermal analysis</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microstructure</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Microstructure</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Eutectique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Eutectics</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Crystal structure</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Réseau quadratique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Tetragonal lattices</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Groupe symétrie</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Symmetry groups</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Groupe espace</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Space groups</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Paramètre cristallin</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Lattice parameters</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Sulfure de cuivre</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Copper sulfide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Cobre sulfuro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Sulfure de germanium</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Germanium sulfides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Cadmium Gallium Sulfure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Cadmium Gallium Sulfides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Anisotropie</s0><s5>29</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Anisotropy</s0><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Alliage quaternaire</s0><s5>30</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Quaternary alloys</s0><s5>30</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>CuInS2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>GeS2</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Thiogallate de cadmium</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8130B</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>6166</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>213</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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